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PD - 97491 AUTOMOTIVE GRADE
Features
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
l l l l l l l
AUIRLR3410
HEXFET(R) Power MOSFET
D
V(BR)DSS RDS(on) max. ID
100V 105m 17A
G S
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
D S
D-Pak AUIRLR3410
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)dg Avalanche CurrentAg Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
Max.
17 12 60 79 0.53 16 150 9.0 7.9 5.0 -55 to + 175 300
Units
A W W/C V mJ A mJ V/ns C
e
g
Thermal Resistance
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
j
Parameter
Typ.
--- --- ---
Max.
1.9 50 110
Units
C/W
i
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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04/12/2010
AUIRLR3410
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 --- --- --- --- 1.0 7.7 --- --- --- --- --- --- 0.122 --- --- 0.105 --- 0.125 --- 0.155 --- 2.0 --- --- --- 25 --- 250 --- 100 --- -100
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 10A VGS = 5.0V, ID = 10A VGS = 4.0V, ID = 9.0A V VDS = VGS, ID = 250A S VDS = 25V, ID = 9.0A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150C nA VGS = 16V VGS = -16V
f f f g
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 7.2 53 30 26 4.5 7.5 800 160 90 34 4.8 20 --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 9.0A VDS = 80V VGS = 5.0V VDD = 50V ID = 9.0A RG = 6.0 VGS = 5.0V Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz
fg fg
D G S
ns
nH
pF
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
g
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 140 740 17 A 60 1.3 210 1100 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 9.0A, VGS = 0V TJ = 25C, IF = 9.0A di/dt = 100A/s
f
fg
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig.11 ) VDD = 25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 9.0A. (See Figure 12) ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Uses IRL530N data and test conditions.
This is applied for LS of D-PAK is measured between When mounted on 1" square PCB (FR-4 or G-10
lead and center of die contact Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at Tj approximately 90C.
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AUIRLR3410
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C5 AEC-Q101-005 Yes MSL1
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRLR3410
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
10
2.5V
1
1
2.5V 20s PULSE WIDTH T J = 25C
1 10
0.1 0.1
100
A
0.1 0.1
20s PULSE WIDTH T J = 175C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 175C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 15A
2.5
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS= 50V 20s PULSE WIDTH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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AUIRLR3410
1400 15
1200
C, Capacitance (pF)
1000
Ciss
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
I D = 9.0A
12
V DS = 80V V DS = 50V V DS = 20V
800
9
600
Coss Crss
6
400
3
200
0 1 10 100
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 175C
I D , Drain Current (A)
100
10
10s
TJ = 25C
10
100s
1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
1 1
TC = 25C TJ = 175C Single Pulse
10
1ms 10ms 100
1.4
1000
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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AUIRLR3410
20
V DS VGS
RD
ID , Drain Current (A)
15
RG 5.0V
D.U.T.
+
-VDD
10
Pulse Width 1 s Duty Factor 0.1 %
5
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
TC , Case Temperature ( C)
75
100
125
150
175
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRLR3410
E AS , Single Pulse Avalanche Energy (mJ)
350
TOP
300
15V
BOTTOM
ID 3.7A 6.4A 9.0A
250
VDS
L
DRIVER
200
RG
10V
D.U.T
IAS tp
+ V - DD
150
A
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
50
0
VDD = 25V
25 50 75 100 125 150
A
175
V(BR)DSS tp
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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AUIRLR3410
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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AUIRLR3410
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUIRLR3410
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLR3410
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLR3410
Ordering Information
Base part AUIRLR3410 Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRLR3410 AUIRLR3410TR AUIRLR3410TRL AUIRLR3410TRR
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AUIRLR3410
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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